2SD2618 transistors power transistor (80v, 4a) 2SD2618 ! features 1) darlington connection for a high h fe . 2) built-in resistor between base and emitter. 3) built-in damper doide. 4) complements the 2sb1676. ! circuit diagram r 300 ? b c e : base : collector : emitter b e c r ! absolute maximum ratings (ta = 25 c) parameter symbol v cbo v ceo v ebo i c p c tj tstg limits 80 80 7 4 2 30 150 ? 55~+150 unit v v v a (dc) i cp 6 a (t = 100ms) w w (tc = 25 c) c c collector-base voltage collector-emitter voltage emitter-base voltage collector current collector power dissipation junction temperature storage temperature ! packaging specifications and h fe type 2SD2618 to-220fn 1k~10k - 500 package h fe code basic ordering unit (pieces) ! electrical characteristics (ta = 25 c) parameter symbol min. typ. max. unit conditions bv cbo bv ceo i cbo i ebo v ce(sat) f t cob 80 80 - - - 1000 - - - - - - - - 40 35 - - 100 10 1.5 10000 - - v v a a v - mhz * 1 * 1 * 2 pf i c = 50 a i c = ? 1ma v cb = 80v v eb = 5v i c /i b = 2a/4ma v ce /i c = 3v/2a v ce = 5v , i e = ? 0.2a , f = 10mhz v cb = 10v , i e = 0a , f = 1mhz collector-base breakdown voltage collector-emitter breakdown voltage collector cutoff current emitter cutoff current collector-emitter saturation voltage dc current transfer ratio transition frequency output capacitance * 1 measured using pulse current. * 2 transition frequency of the device. h fe
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